BGA 622 E6327

D a t a S h e e t , R e v . 2 . 2 , A p r i l 2 00 8 B G A 6 22 Silicon Germanium Wide Band Low Noise A m p l i f i e r w i t h 2 k V E S D P r o te c t i o n S m a l l S i g n a l D i s c r et e s Edition 2008-04-14 Published by Infineon Technologies AG, 81726 München, Germany © Infineon Technologies AG 2008. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BGA622 BGA622, Silicon Germanium Wide Band Low Noise Amplifier with 2 kV ESD Protection Revision History: 2008-04-14, Rev. 2.2 Previous Version: 2005-11-16 Page Subjects (major changes since last revision) All Document layout change Trademarks SIEGET® is a registered trademark of Infineon Technologies AG. Data Sheet 3 Rev. 2.2, 2008-04-14 BGA622 Silicon Germanium Wide Band Low Noise Amplifier with 2 kV ESD Protection 1 Silicon Germanium Wide Band Low Noise Amplifier with 2 kV ESD Protection Feature • High gain |S21|2 = 15.0 dB at 1.575 GHz |S21|2 = 14.2 dB at 1.9 GHz |S21|2 = 13.6 dB at 2.14 GHz • Low noise figure, NF = 1.0 dB at 1.575 GHz • Operating frequency range 0.5 - 6 GHz • Typical supply voltage: 2.75 V • On/Off-Switch • Output-match on chip, input pre-matched • Low part count • 70 GHz fT - Silicon Germanium technology • 2 kV HBM ESD protection (Pin-to-Pin) • Pb-free (RoHS compliant) package 3 4 2 1 SOT343 Applications • LNA for GSM, GPS, DCS, PCS, UMTS, Bluethooth, ISM and WLAN 9FF ,Q 2XW 2Q2II N2KP *1' %*$B3LQBFRQQHFWLRQYVG Figure 1 Pin connection Description The BGA622 is a wide band low noise amplifier, based on Infineon Technologies’ Silicon Germanium Technology B7HF. In order to provide the LNA in a small package the out-pin is simultaneously used for RF out and On/Off switch. This functionality can be accessed using a RF-Choke at the Out pin, where a DC level of 0 V or an open switches the device on and a DC level of VCC switches the device off. While the device is switched off, it provides an insertion loss of 24 dB together with a high IIP3 up to 20 dBm. Type Package Marking BGA622 SOT343 BXs Note: ESD: Electrostatic discharge sensitive device, observe handling precaution Data Sheet 4 Rev. 2.2, 2008-04-14 BGA622 Silicon Germanium Wide Band Low Noise Amplifier with 2 kV ESD Protection Maximum Ratings Table 1 Maximum ratings Parameter Symbol Limit Value Unit Voltage at pin VCC VCC Vout Iin Iout IVcc Pin Ptot TJ TA TSTG VESD 3.5 V 4 V 0.1 mA 1 mA 10 mA 6 dBm 35 mW 150 °C -65... 150 °C -65... 150 °C 2000 V Voltage at pin Out Current into pin In Current into pin Out Current into pin VCC RF input power Total power dissipation, TS < 139 °C 1) Junction temperature Ambient temperature range Storage temperature range ESD capability all pins (HBM: JESD22-A114) 1) TS is measured on the ground lead at the soldering point Note: All Voltages refer to GND-Node Thermal resistance Table 2 Parameter Thermal resistance Value Unit RthJS 300 Junction - soldering point1) 1) For calculation of RthJA please refer to Application Note Thermal Resistance K/W Data Sheet Symbol 5 Rev. 2.2, 2008-04-14 BGA622 Electrical Characteristics 2 Electrical Characteristics 2.1 Electrical characteristics at TA = 25 °C (measured according to Figure 2) VCC = 2.75 V, Frequency = 1.575 GHz, unless otherwise specified Table 3 Electrical Characteristics Parameter Symbol Values Insertion power gain |S21|2 |S21|2 RLin RLout F50Ω IIP3 15.0 dB -27 dB 5 dB 12 dB 1.00 dB 0 dBm IIP3 20 dBm -16.5 dBm Min. Insertion power gain (Off-State) Input return loss (On-State) Output return loss (On-State) Noise figure (ZS = 50 Ω) Input third order intercept point (On-State) 1) Input third order intercept point1) (Off - State) Typ. Input power at 1 dB gain compression P-1dB Unit Max. Total device off current Itot-off 130 260 420 µA Total device on current Itot-on Von 4.0 5.8 7.8 mA 0.8 V On / Off switch control voltage 0 Note / Test Condition f = 0.1 GHz ∆f = 1 MHz, PIN = -28 dBm ∆f = 1 MHz, PIN = -8 dBm VCC = 2.75 V, Vout = VCC VCC = 2.75 V VCC = 2.75 V ON-Mode: Vout = Von Voff 2.0 3.5 V VCC = 2.75 V OFF-Mode: Vout = Voff 1) IP3 values depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 Ω from 0.1 to 6 GHz Data Sheet 6 Rev. 2.2, 2008-04-14 BGA622 Electrical Characteristics 2.2 Electrical characteristics at TA = 25 °C (measured according to Figure 2) VCC = 2.75 V, Frequency = 2.14 GHz, unless otherwise specified Table 4 Electrical Characteristics Parameter Symbol Values Min. Insertion power gain Insertion power gain (Off-State) Input return loss (On-State) Output return loss (On-State) Noise figure (ZS = 50 Ω) Input third order intercept Point (On-State) Typ. 2 1) Input third order intercept point1) (Off-State) Unit Max. Note / Test Condition |S21| |S21|2 RLin RLout F50Ω IIP3 13.6 dB -24 dB 7 dB 10 dB 1.05 dB 3 dBm ∆f = 1 MHz, PIN = -28 dBm IIP3 20 dBm ∆f = 1 MHz, PIN = -8 dBm Input power at 1 dB gain compression P-1dB -13 dBm 1) IP3 values depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 Ω from 0.1 to 6 GHz DC, 2.75V Out, 50 Ω 150pF In, 50 Ω BGA622_S_Parameter_Circuit.vsd Figure 2 Data Sheet S-Parameter Test Circuit (loss-free microstrip test-fixture) 7 Rev. 2.2, 2008-04-14 BGA622 Electrical Characteristics DC, 2.75V Out 47pF (DC-Block) RFC 150pF On/Off Switch DC, 2.75V 2.2nH (for improved input match) 47pF (DC-Block) In BGA622_Application_Circuit.vsd Figure 3 Data Sheet Application Circuit for 1800 - 2500 MHz 8 Rev. 2.2, 2008-04-14 BGA622 Measured Parameters 3 Measured Parameters 2 2 Power Gain |S | , G = f(f) 21 ma V = 2.75V, I = 5.8mA CC Off Gain |S | = f(f) 21 V = 2.75V, V = 2.75V, I tot−on CC 25 OUT tot−off = 0.3mA 0 −5 G ma −10 −15 |S21|2 15 −20 2 |S21| [dB] |S21|2, Gma [dB] 20 −25 10 −30 −35 5 −40 0 −45 0 1 2 3 4 5 6 0 1 Frequency [GHz] Reverse Isolation |S | = f(f) 12 = 5.8mA V = 2.75V, I CC 2 3 4 5 6 5 6 Frequency [GHz] Matching |S |, |S | = f(f) 11 22 = 5.8mA V = 2.75V, I tot−on CC tot−on 0 0 −5 −2 S11 −4 −10 −6 |S11|, |S22| [dB] |S12| [dB] −15 −20 −25 −8 −10 −12 −30 −14 −35 −16 −40 −18 S22 −45 −20 0 1 2 3 4 5 6 0 Frequency [GHz] Data Sheet 1 2 3 4 Frequency [GHz] 9 Rev. 2.2, 2008-04-14 BGA622 Measured Parameters Stability K, B = f(f) 1 VCC = 2.75V, I tot−on = 5.8mA Noise Figure F = f(f) VCC = 2.75V, I tot−on = 5.8mA, ZS = 50Ω 5 1.5 4.5 1.4 4 1.3 3.5 1.2 3 1.1 F [dB] K, B1 K 2.5 2 1 0.9 1.5 0.8 B1 1 0.7 0.5 0.6 0 0.5 0 1 2 3 4 5 6 0 0.5 Frequency [GHz] 1 1.5 2 2.5 3 Frequency [GHz] Input Compression Point P = f(V ) −1dB CC f = 2.14GHz, T = parameter in °C Device Current I = f(T , V ) tot−on A CC V = parameter in V CC A −10.5 8.5 85 3.4 −11 8 20 −11.5 7.5 Itot−on [mA] P−1dB [dBm] −40 −12 −12.5 3.2 7 3 6.5 2.8 −13 6 −13.5 5.5 2.6 −14 2.6 2.8 3 3.2 5 −40 3.4 VCC [V] Data Sheet −20 0 20 40 60 80 TA [°C] 10 Rev. 2.2, 2008-04-14 BGA622 Measured Parameters Power Gain |S |2 = f(T , V ) 21 A CC f = 2.14GHz, V = parameter in V Device Current I = f(V , T ) tot−on CC A T A = parameter in °C CC 8.5 15 −40 8 14.5 20 7.5 14 7 |S |2 [dB] 3.4 21 Itot−on [mA] 85 6.5 13.5 3 6 13 5.5 2.6 5 2.6 2.8 3 V CC 3.2 12.5 −40 3.4 [V] −20 0 20 40 60 80 T [°C] A 2 Power Gain |S | = f(V , T ) 21 CC A f = 2.14GHz, T = parameter in °C A 15.5 15 −40 |S21|2 [dB] 14.5 14 20 13.5 85 13 12.5 2.6 2.8 3 3.2 3.4 VCC [V] Data Sheet 11 Rev. 2.2, 2008-04-14 BGA622 Package Information 4 Package Information 2 ±0.2 0.9 ±0.1 B 1.3 ±0.1 0.20 0.1 max B M 0.3 1 2 +0.2 acc. to DIN 6784 2.1±0.1 3 1.25 ±0.1 A 4 0.15 +0.1 -0.05 +0.1 0.6 +0.1 0.20 M A GPS05605 Figure 4 Package Outline SOT343 0.2 2.3 8 4 Pin 1 Figure 5 Data Sheet 2.15 1.1 Tape for SOT343 12 Rev. 2.2, 2008-04-14